Ukwenziwa kwe-PCB ye-Ceramic ye-AMB ye-Copper Enzima

Ama-PCB e-ceramic e-AMB asebenzisa i-active metal brazing ukubopha ithusi elijiyile ngqo kuma-substrate e-ceramic — okudala isixhumi esiqinile se-copper-ceramic esitholakala ekukhiqizweni namuhla. Inqubo ye-brazing isebenzisa i-Ag-Cu-Ti alloy ku-800–900 °C ngaphansi kwe-vacuum; i-active titanium element imanzisa ubuso be-ceramic futhi yakha isibopho sangempela se-metallurgical esisinda ezimisweni zokujikeleza kokushisa lapho amalunga e-DBC ne-DPC ekugcineni ehluleka khona.

Lokhu kuqina kokubopha yingakho i-AMB isibe ubuchwepheshe obuphambili bokwenza insimbi ibe yi -silicon nitride (Si₃N₄) substrates ze-ceramic - nokuthi kungani inhlanganisela ye-Si₃N₄ + AMB manje isiyipulatifomu ejwayelekile ye-substrate yamamojula kagesi esizukulwane esilandelayo se-SiC kanye ne-GaN kuma-inverters e-EV traction, ama-drive ezimboni, kanye nezinhlelo zamandla avuselelekayo.

I-Highleap Electronics ikhiqiza ama-PCB e-ceramic e-AMB kuma-substrate e-Si₃N₄ kanye ne-AlN anobukhulu bethusi obusuka ku-0.15 mm kuya ku-0.8 mm, ahlanganiswe namakhono ethu okuhlanganisa i-PCB ye-ceramic kanye nokuhlola imodyuli yamandla.

Thola Isilinganiso se-AMB Ceramic PCB →

Indlela Inqubo ye-AMB Esebenza Ngayo

Ukushiswa kwensimbi okusebenzayo kuhlukile kakhulu ku-DBC. Ku-DBC, izibopho zethusi ku-ceramic ngokusebenzisa i-copper-oxide eutectic eyakhiwe ku-~1,065 °C — i-ceramic kumele ibe yi-oxide (alumina) noma ibe nendawo yokwakha i-oxide ukuze i-DBC isebenze ngokwethembeka. Lokhu kunciphisa ukusebenza kwe-DBC ezintweni zobumba ezingezona i-oxide njenge-Si₃N₄.

I-AMB ixazulula lokhu ngokungenisa insimbi esebenzayo — i-titanium — ku-alloy ye-braze. Lapho izinga lokushisa le-brazing (800–900 °C) ngaphansi kwe-vacuum noma umoya ongenawo umoya, i-titanium isabela ngqo ebusweni be-ceramic, yakha ungqimba lokusabela oluncane (ngokuvamile i-TiN ku-Si₃N₄, noma i-TiO ku-Al₂O₃) olumanziswa yi-braze encibilikisiwe ye-Ag-Cu. Umphumela uba yisibopho se-metallurgical phakathi kwethusi ne-ceramic esingaxhomekile ekwakhekeni kwe-oxide.

Uchungechunge lokukhiqiza lwe-AMB:

I-AMB vs. DBC: Lapho Ubuchwepheshe Ngabunye Buyisinqumo Esifanele

I-AMB ayiyona indawo ye-DBC evamile — iyisibuyekezo sezinhlelo zokusebenza lapho i-DBC ifinyelela khona ukuthembeka kwayo noma imikhawulo yobukhulu bethusi. Ukukhetha phakathi kwazo kuncike emikhawulweni ethile yokuklama.

Sebenzisa i-DBC uma: i-module yakho yamandla isebenzisa i-alumina noma i-substrate ye-AlN, isidingo sokujikeleza kokushisa singaphansi kwemijikelezo engu-~5,000, futhi ubukhulu bethusi obungu-600 µm noma ngaphansi buyanele. I-substrate ye-AlN DBC isalokhu iyisinqumo esingabizi kakhulu samamojula e-IGBT kuma-UPS ezimboni, kuma-welders, kanye nama-solar inverters anamaphrofayili okujikeleza aphakathi nendawo.

Sebenzisa i-AMB uma: umklamo ucacisa i-substrate ye-Si₃N₄ (i-DBC ayibophi ngokuthembekile ku-Si₃N₄), impilo yokujikeleza kokushisa idlula imijikelezo eyi-10,000, ukushintshashintsha kokushisa (ΔT) kudlula u-200 °C, noma ukujiya kwethusi okungaphezu kuka-600 µm kuyadingeka ekuphatheni kwamanje. Lezi zimo zisebenza kuma-inverter amaningi e-SiC/GaN traction ebanga lezimoto kanye nama-drive ezimboni esizukulwane esilandelayo.

Ukukhethwa Kwe-Substrate Kwama-PCB E-AMB Ceramic

I-Si₃N₄ — i-substrate evelele ye-AMB yezimoto kanye ne-EV

Ukuqina kokuqhekeka kwe-silicon nitride (700–1,000 MPa) kumunca ukucindezeleka kwe-thermo-mechanical okubangelwa ukwanda kwethusi elijiyile ngesikhathi sokujikeleza kokushisa. Inhlanganisela ye-Si₃N₄ + AMB idlula njalo izidingo ze-AEC-Q100/Q200 thermal cycling ukuze kuqinisekiswe izimoto — ngokuvamile –55 kuya ku-+175 °C emijikelezweni yamandla engu-3,000+ kanye –55 kuya ku-+250 °C emijikelezweni yokushaqeka kokushisa engu-1,000+. Leli zinga lokuthembeka manje liyimfuneko eyisisekelo yabahlinzeki be-EV Tier-1 abacacisa amamojula e-SiC MOSFET.

I-AlN — AMB yokuqhuba ukushisa okuphezulu kakhulu

Uma ukuhanjiswa kokushisa (170–200 W/m·K) kubaluleke kakhulu kunokukhuthazela kokujikeleza, i-AlN AMB inikeza indlela engcono kakhulu yokushisa. I-AlN AMB isetshenziswa kuma-amplifiers e-RF anamandla aphezulu, amamojula athile e-IGBT ezimboni, kanye nezinhlelo zokusebenza lapho ukukhishwa kokushisa kubusa khona isabelomali sokuklama. Kodwa-ke, ukuqina kwe-AlN okuphansi kokuphuka (300–350 MPa) kusho ukuthi ifinyelela imikhawulo yokujikeleza ngokushesha kune-Si₃N₄ ngaphansi kokucindezeleka okufanayo - ukuhwebelana ukusebenza kokushisa uma kuqhathaniswa nokukhuthazela komshini.

Izinhlelo Zokusebenza Eziqhuba Isidingo Se-AMB

Izinto Okucatshangwa Ngazo Ngomklamo Wezingxenye Ze-AMB

Ama-PCB e-ceramic e-AMB adinga ukunakwa okukhethekile komklamo ohlukile kumkhuba we-DBC kanye ne-PCB ye-organic:

I-geometry yephethini yethusi ithinta ukuthembeka. Iziqhingi ezinkulu zethusi ezihlukanisiwe ezinemiphetho engazelelwe zidala ukugcwala kokucindezeleka ngesikhathi sokujikeleza kokushisa. Gwema izilinganiso zesici se-copper patch ezingaphezu kuka-5:1. I-radii yekona kuma-copper pads kufanele ibe ngu-≥0.5 mm ukuze kuncishiswe ukugcwala kokucindezeleka. Iziqondiso zokuklama zama-PCB e-ceramic zichaza le mithetho ngemingcele ethile yobukhulu.

Ithusi elilinganisiwe kuzo zombili izinhlangothi kunciphisa ukugoba. Ubukhulu bethusi obungalingani ezindaweni eziphezulu nangaphansi kudala amandla okukhulisa ukushisa angalingani ngesikhathi sokushiswa kanye nangesikhathi sokusebenza, okuholela ekugobeni kwe-substrate. I-metalization yethusi elinganisiwe - noma iphethini yethusi elawulwayo yangemuva - igcina i-substrate iphansi kuzo zonke izinkambo zokushisa.

Ukwakheka kwejoyinti le-solder kumele kubhekele ukungalingani kwe-CTE. Umehluko we-CTE phakathi kwe-Si₃N₄ (~3 ppm/°C) kanye nama-component lead noma i-system PCB (~17 ppm/°C ye-FR4) udala ukucindezeleka kwe-shear kuma-solder joints ngesikhathi sokujikeleza kokushisa. Sebenzisa ama-connectivity ahambisanayo (ama-flex lead, ama-spring contacts) noma ukugcwalisa okungaphansi lapho ukungalingani kwe-CTE kungenakugwenywa.

Isu lokukhweza libalulekile. I-Ceramic iyaphuka - ukufakwa kwezikulufo ngaphandle kwezinsimbi eziqinile kanye nemikhawulo ye-torque kuzophula i-substrate. Ukubopha okunamathelayo noma ukubopha ngama-pads ahambisanayo kususa imithwalo yamaphuzu. Umhlahlandlela wethu wobunjiniyela be-PCB wesisekelo se-ceramic uhlanganisa izindlela zokwehluleka kokufakwa kanye nokuvimbela.

Amakhono Okukhiqiza e-Highleap AMB

imibuzo ejwayelekile ukubuzwa

Iyini i-AMB ceramic PCB?

I-PCB ye-ceramic ye-AMB (Active Metal Brazing) iyibhodi lesifunda lapho i-foil yethusi iboshelwa khona ku-substrate ye-ceramic kusetshenziswa i-alloy ye-braze esebenzayo — ngokuvamile i-Ag-Cu-Ti — ku-800–900 °C ngaphansi kwe-vacuum. I-titanium isabela ebusweni be-ceramic ukuze yakhe isibopho se-metallurgical. I-AMB ikhiqiza isixhumi esibonakalayo se-copper-ceramic esinamandla kunanoma yiluphi ubuchwepheshe be-metallization, yingakho ichazwe kuzinhlelo zokusebenza ezidinga ukukhuthazela okukhulu kokujikeleza kokushisa — ikakhulukazi amamojula wamandla we-SiC ne-GaN kuma-inverters e-EV.

Uyini umehluko phakathi kwe-AMB ne-DBC?

I-DBC isebenzisa i-copper-oxide eutectic ku-~1,065 °C ukubopha ithusi ku-ceramic — isebenza kahle ku-alumina kanye ne-AlN. I-AMB isebenzisa i-active metal brazing ku-800–900 °C eyakha isibopho samakhemikhali nanoma yiluphi uhlobo lwe-ceramic, kufaka phakathi i-Si₃N₄. I-AMB ifinyelela amandla aphezulu okubopha, isekela ithusi elijiyile (kufika ku-800 µm), futhi inikeza impilo yokujikeleza ngokushisa ende engu-5–10× kune-DBC kuma-substrate alinganayo. I-DBC isalokhu ingabizi kakhulu kumamojula ajwayelekile e-IGBT anezidingo zokujikeleza ngokulinganisela. Ukuze uthole imininingwane eningiliziwe ye-DBC, bheka amakhono ethu e-DBC substrate.

Kungani i-Si₃N₄ iyi-substrate ekhethwayo ye-AMB?

I-Si₃N₄ inokuqina kokuphuka okungu-2–3 × kwe-alumina kanye ne-AlN (700–1,000 MPa vs. 300–400 MPa). Uma ihlanganiswa nesibopho esiqinile se-AMB, ama-substrate e-Si₃N₄ AMB asinda imijikelezo yokushisa engaphezu kuka-30,000+ ku- –55 kuya ku-+250 °C — isidingo ezinye i-substrate ze-ceramic ezingakwazi ukusifinyelela ngokuthembekile. Lokhu kuqina yingakho ama-OEM ezimoto manje echaza i-Si₃N₄ AMB yama-inverter e-SiC traction anezidingo zewaranti yeminyaka engu-15+.

Yiziphi izimboni ezisebenzisa ama-PCB e-AMB ceramic?

Ama-inverter e-EV traction (amamojula e-SiC MOSFET), ama-drive ezimoto zezimboni, ama-converter amandla avuselelekayo (amandla elanga, omoya), ama-electronics e-traction yesitimela, kanye nezinhlelo zamandla ezindiza ezinokwethenjelwa okuphezulu. Noma yiluphi uhlelo lokusebenza lapho ubuningi bamandla budlula i-100 W/cm², ukujikeleza kokushisa kudlula imijikelezo eyi-10,000, noma ukujiya kwethusi okungaphezu kuka-300 µm kuyadingeka.

Yimaphi amafayela adingwa yi-Highleap ukuze acaphune iphrojekthi ye-AMB?

Amafayela e-Gerber (izingqimba zethusi, uhlaka, imaski yokubopha), umdwebo wokwenziwa ochaza izinto ze-ceramic, ukujiya kwe-substrate, ukujiya kwethusi, ukuqeda kobuso, ukubekezelelana kobukhulu, kanye nezidingo zokuhlolwa kokujikeleza kokushisa noma ukuthembeka okumele imodyuli yakho ihlangabezane nazo. Ukuze uthole ukuhlanganiswa kwemodyuli ye-turnkey, engeza umdwebo we-BOM kanye nomhlangano. Sinikeza izincomo zokubuyekezwa kwe-DFM kanye nezinto ezisuselwe kumandla akho kanye nemininingwane yokugibela.